Structure and Climb of Faulted Dipoles in GaAs

Z-shape faulted dipoles in deformed GaAs were investigated by using high resolution electron microscopy. There is no difference in the core structure of the a and b dislocations of stair-rod and 90 Shockley partials, nor in the dissociated stacking fault width. The central stacking fault is found to generate large local atomic displacements and exhibits a different structure from that of the intrinsic stacking fault of a dissociated dislocation considered so far. 90 Shockley partials of Z-shape faulted dipole climbed through absorption of interstitials during electron irradiation.